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| 2N3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES * PNP epitaxial silicon, planar design * Collector-emitter voltage V CE = 40V * Collector current I C = -200mA * Pb free product are available :99% Sn above can meet RoHS environment substance directive request 40 Volts POWER 625 mWatts MECHANICAL DATA Case: TO-92 Terminals: Solderable per MIL-STD-750, Method 2026 Approx Weight : 0.02grams Marking : S2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation Storage Temperature Junction Temperature SYMBOL V C EO V C BO V EBO IC PTOT TSTG TJ VALUE -40 -40 -5.0 -200 625 -55 to 150 -55 to 150 UNIT V V V mA mW O C C O THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction to Ambient SYMBOL VALUE 200 UNITS O RJA C/W REV.0-DEC.12.2005 PAGE . 1 2N3906 ELECTRICAL CHARACTERISTICS PA RA M E TE R C o lle c to r - E mi tte r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e B a s e C ut o f f C ur r e nt C o l l e c t o r C ut o f f C ur r e nt S YM B O L V (B R)C E O V (B R)C B O V (B R)E B O IB L IC E X T E S T C O N D IT IO N IC = 1 . 0 m A , IB = 0 IC = - 1 0 u A , IE = 0 IE = 1 0 u A , IC = 0 V CE=-3 0 V, V EB=-3 .0 V V CE=-3 0 V, V EB=-3 .0 V IC = - 0 . 1 m A , V C E = - 1 . 0 V IC = - 1 . 0 m A , V C E = - 1 . 0 V IC = - 1 0 m A , V C E = - 1 . 0 V IC = - 5 0 m A , V C E = - 1 . 0 V IC = - 1 0 0 m A , V C E = - 1 . 0 V IC = - 1 0 m A , IB = - 1 . 0 m A IC = - 5 0 m A , IB = - 5 . 0 m A IC = - 1 0 m A , IB = - 1 . 0 m A IC = - 5 0 m A , IB = - 5 . 0 m A V C B = - 5 . 0 V , IE = 0 , f = 1 M H Z V C B = - 0 . 5 V , IC = 0 , f = 1 M H Z M IN . -40 -40 -5 .0 60 80 100 60 30 -0 .6 5 - T YP. - MA X . -50 -50 300 -0 .2 5 -0 .4 -0 .8 5 -0 .9 5 4 .5 10 35 35 225 75 U N IT V V V nA nA D C C ur r e nt G a i n hFE - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e C o l l e c t o r - B a s e C a p a c i t a nc e E m i t t e r - B a s e C a p a c i t a nc e D e l a y Ti m e R i s e Ti m e S t o r a g e Ti m e F a l l Ti m e V C E ( S AT) V B E ( S AT) C CBO C EBO td tr ts tf V V pF pF ns ns ns ns V CC=-3 V, V BE=-0 .5 V, IC = - 1 0 m A , IB = - 1 m A - V C C = - 3 V , IC = - 1 0 m A IB 1 = IB 2 = - 1 m A - SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V 3V 275O < 1ns 0 0.5V 10KO C S* < 4pF 1N916 275O < 1ns +9.1V 0 10KO CS * < 4pF 1N916 -10.9V 300ns Duty Cycle ~ 2.0% -10.9V 10 to 500us Duty Cycle ~ 2.0% Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit REV.0-DEC.12.2005 PAGE . 2 2N3906 ELECTRICAL CHARACTERISTICS CURVES 300 TJ = 150 C 250 1.0 1.2 VCE = 1V 200 hFE TJ = 100 C VBE(V) 0.8 TJ = 25 C 0.6 TJ = 100 C 0.4 TJ = 150 C 150 TJ = 25 C 100 50 VCE = 1V 0 0.01 0.2 0.1 1 10 100 1000 0.0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 1. Typical hFE vs. Collector Current 1.00 IC/IB = 10 Fig. 2. Typical VBE vs. Collector Current 1.000 TJ = 25 C VCE(sat) (V) 0.10 TJ = 150 TJ = 25 VBE(sat) (V) TJ = 100 C TJ = 150 C I /IB = 10 C 0.01 0.01 0.1 1 10 100 1000 0.100 0.01 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VCE (sat) vs. Collector Current 10 Fig. 4. Typical VBE (sat) vs. Collector Current CIB (EB) Capacitance (pF) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Typical Capacitances vs. Reverse Voltage REV.0-DEC.12.2005 PAGE . 3 2N3906 TO-92 Case Outline TO-92 LEGAL STATEMENT Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-AUG.23.2005 PAGE . 4 |
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